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APT41H50B APT41H50S
500V, 41A, 0.15 Max, trr, 215ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO
-2
47
D3PAK
APT41H50B
APT41H50S
D
Single die FREDFET
G S
FEATURES
* Fast switching with low EMI * Very Low trr for maximum reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * UPS * Welding * Solar inverters * Telecom rectifiers
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 41 26 135 30 930 21
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 625 0.20 Unit W C/W
C
2-2007 050-8115 Rev A
oz g in*lbf N*m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 21A VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT41H50B_S
Typ 0.60 0.12 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 500
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.15 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 21A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 32 6810 90 735 425
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 333V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 21A, VDS = 250V Resistive Switching VDD = 333V, ID = 21A RG = 4.7 6 , VGG = 15V
215 170 38 80 29 35 80 26 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 41
Unit A
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
G S
TJ = 25C TJ = 125C
135 1.0 215 370 0.90 2.6 8.6 12.7 30 V ns C A V/ns
ISD = 21A, TJ = 25C, VGS = 0V
ISD = 21A 3 diSD/dt = 100A/s VDD = 100V
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
ISD 21A, di/dt 1000A/s, VDD = 333V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 4.22mH, RG = 4.7, IAS = 21A.
2-2007 Rev A 050-8115
3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.84E-7/VDS^2 + 3.75E-8/VDS + 1.05E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0
V
GS
= 10V
80 70 ID, DRIAN CURRENT (A) 60 50 40 30 20
APT41H50B_S
T = 125C
J
V
GS
= 7 &10V
6.5V
TJ = -55C
TJ = 25C
6V
5.5V
TJ = 150C
TJ = 125C
5V
10 0 0 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 21A
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.5
140 120 ID, DRAIN CURRENT (A) 100 80 60 40 20 0 0
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C TJ = 25C TJ = 125C
1.0
0.5
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 60 50
8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
Ciss
20,000 10,000
gfs, TRANSCONDUCTANCE
TJ = -55C TJ = 25C TJ = 125C
40 30 20 10 0
C, CAPACITANCE (pF)
1000
Coss
100 Crss 10
0
40 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
ID = 21A
50
500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 140 ISD, REVERSE DRAIN CURRENT (A) 120 100 80
TJ = 25C
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
VDS = 100V
VDS = 250V
60 40 20 0 0 2-2007 050-8115 Rev A
TJ = 150C
VDS = 400V
250 200 150 100 50 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
200 100
I
DM
200 100
I
DM
APT41H50B_S
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
13s
Rds(on)
10
Rds(on)
13s
100s
100s
1ms
1
TJ = 125C TC = 75C
10ms
100ms
1
TJ = 150C TC = 25C
1ms 10ms
100ms
DC line
0.1
1
800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
DC line
800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.0846 Dissipated Power (Watts) 0.0122 0.249
TC (C)
0.116 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7 0.5 0.3
Note:
0.15
PDM
0.10
ZEXT
t1 t2
0.05 0.1 0 10
-5
SINGLE PULSE
0.05 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
2-2007
19.81 (.780) 20.32 (.800)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev A
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
050-8115
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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